threshold current

The linear dependences of the threshold current and the maximum current on DC clearing ion voltage are also presented.

提出了适于此类清洗电极的直流清除离子电压与积累束流阈值流强、最高流强的线性关系。

Low Threshold Current Density InGaAs/ GaAs/ AlGaAs Strained Quantum Well Lasers

低阈值电流密度INGaAs/GaAs/AlGaAs应变量子阱激光器

Finally, the current self-heating effect on the threshold of the switching current are discussed.

最后, 我们初步讨论了电流产生的热效应对临界翻转电流的影响.

And double oxide-confining regions offer a method of decreasing threshold current and controlling high order modes.

同时双氧化限制层为VCSEL器件提供了一种降低阈值，抑制高阶横模的方法。

The lowest threshold current density of 2000A/ cm~ 2 and average normalized threshold current density of 5000A/ cm~ 2. μ m were obtained under pulsed operation at room temperature.

室温下的最低阈电流密度是2000A/cm~2.平均归一化阈电流密度是5000A/cm~2μm。

InGaAsP/ InP Buried Crescent Laser Emitting at 1.3 μ m with Low Threshold Current

1.3微米低阈值掩埋新月型InP-InGaAsP激光器

Low Threshold Current High Output Power Fundamental Transverse Mode 1.3 μ m InGaAsP/ InP BH Laser

1.3微米低阈值大功率基横模BH InGaAsP/InP激光器

Consequence of Current Spreading Effect on Threshold Current of Oxide Stripe-Geometry DH Lasers

电流扩展效应对氧化物条形激光器阈值的影响

The minimum threshold current could be less than 1 mA when the facet reflectivity is 0.9.

端面反射率为0.9时，最小阈值电流可以小于lmA。

The wavelength dependence of threshold current is studied experimentally, and the obtained experimental results coincide with the theoretical analyses well.

并从理论和实验上研究了阈值电流与波长之间的依赖关系。

The relation of device parameter on threshold current and optimal well numbers have been discussed.

讨论了阈值电流密度、最佳阱数等与器件参数（阱数、腔长和反射率等）之间的依赖关系。

InGaAsP/ InP PBH Bistable Lasers with Low Threshold Current

低阈值InGaAsP/InP PBH双稳激光器

At room temperature the CW threshold current is as low as 55 mA.

室温下的阈电流低达55mA。

Threshold current and external quantum efficiency of quantum well lasers

量子阱激光器的阈值电流和外量子效率

The optimal RTS threshold is calculated by estimate the current collision probability Pc of channel.

通过估计当前信道数据分组发送的冲突概率实现了最优RTS门限的计算。

Through numerical calculation and analysis, the effects of structure parameters on far field pattern and threshold current density are studied.

通过数值计算分析，详细研究了结构参数对远场及阈值电流密度等的影响。

Low Threshold Current InGaAs-GaAs Strained Layer Quantum Well Laser

低阈值InGaAs-GaAs应变层多量子阱激光器

At room temperature, the random lasing from ZnO with the threshold current 43 mA was obtained.

室温条件下在该结构中获得了阈值电流为43mA的ZnO随机激光输出。

When the relative humidity of gas at the inlet is increase, the threshold current density is linearly decreased;

临界电流随阴极气体进口相对湿度的增加而线性下降；

In order to give a low threshold current density, the curvature radius should be more about 150 μ m.

为了保持较低的阈值电流，本文建议曲率半径选择在15μm左右。

Stripe Semiconductor Lasers with Low& Threshold Current and Fundamental Transverse Mode

低阈值基横模条形半导体激光器

Based on the model, the laser characteristics such as the threshold current, mode suppression ratio etc. have been specified.

利用该模型对光纤光栅外腔半导体激光器的阈值电流、模式抑制比等进行了研究，得到了一些新的结论，并对此结论作出了合理的解释。

The results were that TX-KA101's its driving voltage is reasonable, have three-sect current protection, its soft turn-off time and over-current protect threshold value can be regulated.

测试结果表明，TX&KA101输出驱动电压合理，具有IGBT过流三段式保护，慢关断时间和过压保护阚值可调。

Accurate measurement of threshold current for semiconductor lasers

半导体激光器阈值电流的精确测量

GaAs/ GaAlAs Vertical Cavity Surface Emitting Lasers with Low Threshold Current

GaAs／GaAlAs低阈值垂直腔面发射激光器

The effect of current spreading in the cap layer of carbon doped GaAs laser on its threshold current was studied.

实验研究了碳掺杂GaAs激光器帽层的侧向扩展电流对阈值的影响。

Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers'

GaAs基长波长量子点激光器增益和阈值电流密度的理论分析（英文）

Low threshold current and high quantum efficiency ridge waveguide lasers

低阈值电流、高量子效率脊形波导激光器

For the grooved gate PMOSFET, the study results prove that with the increase of channel doping density, the threshold voltage increases, the drain current driving ability decreases, and the hot carrier effect is suppressed, as in the planar device.

研究发现，随着沟道掺杂浓度的提高，与平面器件相同，槽栅器件的阈值电压提高，漏极驱动能力降低，抗热载流子效应增强；

It compensates for the temperature characteristics of the resistor and the threshold voltage VTH in such a way that the reference current has small temperature dependence.

主要利用电阻的温度系数与阈值电压VTH温度系数相同的特性实现温度补偿原理。